Title :
High power four channel IGBT driver IC
Author :
Pawel, S. ; Lehrmann, J. ; Herzer, R. ; Netzel, M.
Author_Institution :
Semikron Elektron. GmbH, Nuernberg, Germany
fDate :
6/24/1905 12:00:00 AM
Abstract :
A solution is presented for the monolithic integration of up to four low side drivers inside full bridge power conversion systems. Inexpensive 1 μm high voltage CMOS technology was used in order to keep costs down. It was thus necessary to design special level shifter circuits to facilitate the use of negative turn off voltages. Output currents up to 3.5 A per stage, high insensibility to ESD, soft turn off on short-circuiting, and a complex internal fault management are additional key features. The driver transistors, which are optimized for capacitive loads, control IGBTs up to 1200 V and 150 A per stage.
Keywords :
CMOS integrated circuits; PWM power convertors; bridge circuits; driver circuits; fault tolerance; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; 1 micron; 1200 V; 150 A; 3.5 A; ESD insensibility; IGBT control; PWM power conversion; bridge power conversion systems; capacitive loads; high power four-channel IGBT driver IC; high voltage CMOS technology; internal fault management; level shifter circuits; low side drivers; monolithic integration; negative turn off voltages; optimized driver transistors; output currents; pulse width modulation; short-circuit soft turn-off; Bridge circuits; CMOS technology; Circuit faults; Costs; Driver circuits; Electrostatic discharge; Insulated gate bipolar transistors; Monolithic integrated circuits; Power conversion; Voltage;
Conference_Titel :
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Print_ISBN :
0-7803-7380-4
DOI :
10.1109/ICCDCS.2002.1004095
