Title :
Pb thin films on Si(111): Local density of states and defects
Author :
Eilers, Stefan ; Yi Du ; Shi Xue Dou
Author_Institution :
Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
Abstract :
Local density of states and atomic structure of the stripped incommensurate phase, the √(3) ×√(7) phase and the 1 × 1 phase of a monolayer of Pb on Si(111) are characterized by scanning tunneling microscopy and spectroscopy. The dI/dV-images reveal congruent local density of states structures for the stripped incommensurate and the √(3) ×√(7) phase but suggest a hexagonal lattice of the local density of states for the 1×1 phase while the atomic structure consists of one more atom in the center of each hexagon. Vacancy defects and impurities show a depletion of local density of states for the stripped incommensurate and √(3) ×√(7) phase. Vacancies and impurities show an increase and no clear depletion in local density of states for the 1 × 1 phase, respectively.
Keywords :
electronic density of states; impurities; lead; metallic thin films; monolayers; scanning tunnelling microscopy; scanning tunnelling spectroscopy; surface structure; vacancies (crystal); √(3) ×√(7) phase; Pb; Pb thin films; Si; Si(111) surface; atomic structure; dI/dV-images; hexagonal lattice; impurities; local density of states; monolayers; scanning tunneling microscopy; scanning tunneling spectroscopy; stripped incommensurate phase; vacancies; Atomic layer deposition; Atomic measurements; Impurities; Lattices; Lead; Silicon carbide; Surface reconstruction; dI/dV-mappings local density of states; lead thin films; stm; sts;
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2014 International Conference on
Conference_Location :
Adelaide, SA
DOI :
10.1109/ICONN.2014.6965260