DocumentCode
1627675
Title
A 2.4G-Hz CMOS Power Amplifier
Author
Fu, Jian ; Hao, Shilei ; Huang, Yumei ; Hong, Zhiliang
Author_Institution
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear
2010
Firstpage
659
Lastpage
661
Abstract
A 2.4G-Hz high linear power amplifier (PA) with a parallel class A&B structure is presented. The self-biased cascode transistors are used to improve the reliability. The PA was fabricated in a 0.13-μm CMOS process. Measurement results show the power gain is 9.6dB and the output power at the 1dB compression point is larger than 10.6dBm under a single supply voltage of +3.3V. The measured IMD3 is -40dBc at around 0.3dBm output power (one-tone each) in two-tone test.
Keywords
CMOS analogue integrated circuits; UHF amplifiers; UHF transistors; power amplifiers; reliability; CMOS power amplifier; frequency 2.4 GHz; gain 1 dB; gain 9.6 dB; reliability; self-biased cascode transistors; size 0.13 mum; voltage 3.3 V; CMOS integrated circuits; Gain; Logic gates; Power amplifiers; Power generation; Power measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667289
Filename
5667289
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