Title :
A 53–64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth
Author :
Ko, Minsu ; Rücker, Holger ; Choi, Woo-Young
Author_Institution :
Yonsei Univ., Seoul, South Korea
Abstract :
A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-¿m SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm × 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; inductors; isolation technology; mixers (circuits); BiCMOS technology; Gilbert-cell direct up-conversion mixer; IF bandwidth; LO-to-RF isolation; RF baluns; bandwidth 4 GHz; current 10 mA; frequency 53 GHz to 64 GHz; on-chip stacked inductors; voltage 2.5 V; Bandwidth; BiCMOS integrated circuits; Frequency conversion; Germanium silicon alloys; Impedance matching; Inductors; Isolation technology; Mixers; Radio frequency; Silicon germanium; 60-GHz unlicensed band; BiCMOS integrated circuits; baluns; inductors; millimeter wave mixers;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422955
