Title :
A differential 77-GHz receiver with current re-use low-noise amplifier in SiGe technology
Author :
Kissinger, Dietmar ; Forstner, Hans Peter ; Jäger, Herbert ; Maurer, Linus ; Weigel, Robert
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
This paper presents a differential current re-use stacked double common-emitter stage low-noise amplifier and corresponding receiver frontend for 77 GHz automotive radar systems. Both circuits have been manufactured in an improved SiGe:C HBT technology with ft/fmax = 200/250 GHz and can operate in differential or single-ended mode. The receiver shows a gain of 24.5 dB and single sideband noise figure of 15.8 dB. The gain and noise figure of the LNA in single-ended mode are 12 dB and 9.5 dB respectively, suggesting a differential noise figure of approximately 6.5 dB.
Keywords :
Ge-Si alloys; bipolar MIMIC; bipolar integrated circuits; differential amplifiers; low noise amplifiers; millimetre wave amplifiers; radar receivers; road vehicle radar; SiGe:C; SiGe:C HBT technology; automotive radar; differential current re-use; differential noise figure; differential receiver; double common-emitter stage; frequency 200 GHz; frequency 250 GHz; frequency 77 GHz; gain 12 dB; gain 24.5 dB; low-noise amplifier; noise figure 15.8 dB; noise figure 9.5 dB; single sideband noise figure; Automotive engineering; Circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Manufacturing; Noise figure; Radar; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422956
