DocumentCode
1627952
Title
Zero level metal thin film package for RF MEMS
Author
Barriere, F. ; Crunteanu, A. ; Bessaudou, A. ; Pothier, A. ; Cosset, F. ; Mardivirin, D. ; Blondy, P.
Author_Institution
XLIM, Univ. de Limoges, Limoges, France
fYear
2010
Firstpage
148
Lastpage
151
Abstract
Because they have moving parts, and they need to work in a specific atmosphere (vacuum, inert gas...), micro-electromechanical system (MEMS) are not compatible with integrated circuit packaging technologies. So, in order to accelerate commercialization of RF MEMS devices, the development of packaging technologies is one of the most critical issues that should be solved. A process has been developed to effectively package RF MEMS switches using a technique called wafer level thin film micro encapsulation. This technology is designed to be compatible with high performance RF MEMS ohmic switch fabrication.
Keywords
microswitches; semiconductor device packaging; RF MEMS devices; RF MEMS ohmic switch fabrication; RF MEMS switches; integrated circuit packaging technology; microelectromechanical system; radio frequency; wafer level thin film micro encapsulation; zero level metal thin film package; Atmosphere; Integrated circuit packaging; Integrated circuit technology; Radiofrequency microelectromechanical systems; Switches; Thin film circuits; Transistors; Vacuum systems; Vacuum technology; Wafer scale integration; RF MEMS; package;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location
New Orleans, LA
Print_ISBN
978-1-4244-5456-3
Type
conf
DOI
10.1109/SMIC.2010.5422957
Filename
5422957
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