• DocumentCode
    1627952
  • Title

    Zero level metal thin film package for RF MEMS

  • Author

    Barriere, F. ; Crunteanu, A. ; Bessaudou, A. ; Pothier, A. ; Cosset, F. ; Mardivirin, D. ; Blondy, P.

  • Author_Institution
    XLIM, Univ. de Limoges, Limoges, France
  • fYear
    2010
  • Firstpage
    148
  • Lastpage
    151
  • Abstract
    Because they have moving parts, and they need to work in a specific atmosphere (vacuum, inert gas...), micro-electromechanical system (MEMS) are not compatible with integrated circuit packaging technologies. So, in order to accelerate commercialization of RF MEMS devices, the development of packaging technologies is one of the most critical issues that should be solved. A process has been developed to effectively package RF MEMS switches using a technique called wafer level thin film micro encapsulation. This technology is designed to be compatible with high performance RF MEMS ohmic switch fabrication.
  • Keywords
    microswitches; semiconductor device packaging; RF MEMS devices; RF MEMS ohmic switch fabrication; RF MEMS switches; integrated circuit packaging technology; microelectromechanical system; radio frequency; wafer level thin film micro encapsulation; zero level metal thin film package; Atmosphere; Integrated circuit packaging; Integrated circuit technology; Radiofrequency microelectromechanical systems; Switches; Thin film circuits; Transistors; Vacuum systems; Vacuum technology; Wafer scale integration; RF MEMS; package;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422957
  • Filename
    5422957