DocumentCode :
1627967
Title :
A low value normally on RF-MEMS switched capacitor For high Q millimeter wave tuning
Author :
Barriere, F. ; Crunteanu, A. ; Pothier, A. ; Chatras, M. ; Blondy, P.
Author_Institution :
XLIM, Univ. de Limoges, Limoges, France
fYear :
2010
Firstpage :
77
Lastpage :
79
Abstract :
RF-MEMS are allowing the practical fabrication of high Q tunable elements, such as tuners filters, or cavities. The MEMS capacitor can be switched between 14 fF and 4 fF, with a very low series resistance. Significant contrast could be obtained with extremely low value capacitances, and low series resistance.
Keywords :
capacitors; microswitches; RF-MEMS switched capacitor; high Q millimeter wave tuning; high Q tunable elements; low value capacitance; tuners filters; very low series resistance; Capacitance; Capacitors; Electrodes; Fabrication; Filters; Gold; Radiofrequency microelectromechanical systems; Silicon; Varactors; Voltage; RF-MEMS; tunable networks; varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
Type :
conf
DOI :
10.1109/SMIC.2010.5422958
Filename :
5422958
Link To Document :
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