Title :
Capacitance of carrier depletion silicon-on-insulator optical modulation diodes
Author :
Jayatilleka, Hasitha ; Sacher, Wesley D. ; Poon, Joyce K S
Author_Institution :
Dept. of Electr. & Comput. Eng, Univ. of Toronto, Toronto, ON, Canada
Abstract :
An analytical model for the capacitance of silicon-on-insulator optical modulation diodes is derived. Fringe capacitance can increase power consumption (~18%) and reduce f3dB (~8GHz). Suppression of fringe fields can lead to speed and efficiency improvement.
Keywords :
optical modulation; power consumption; semiconductor diodes; silicon-on-insulator; analytical model; carrier depletion capacitance; frequency 8 GHz; fringe capacitance; fringe fields suppression; power consumption; silicon-on-insulator optical modulation diodes; Analytical models; Capacitance; Finite element methods; Optical modulation; Optical waveguides;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324153
