Title :
Mixed-signal techniques in mm-wave range for 100 Gbit decision feedback equalizer
Author :
Awny, A. ; Thiede, A. ; Elkhouly, M. ; Borngraber, J. ; Korndorfer, F. ; Scheytt, J. Christoph
Author_Institution :
Dept. Of High-Freq. Electron., Univ. of Paderborn, Paderborn, Germany
Abstract :
The design of very high speed broadband latched comparators and D flip-flops in 0.13 ¿m SiGe bipolar technology is presented. The latched comparators are used as a broadband front-end of a 1-tap decision feedback equalizer (DFE) for 100 Gb/s optical communication. Techniques for evaluating the bandwidth of the differential voltage gain from the single ended S-parameter measurements of the designed comparators up to 110 GHz are presented. The measurement results show a 3 dB bandwidth of about 70.5 GHz for the differential voltage gain. A static frequency divider is also fabricated to evaluate the performance of the designed D flip-flops used in the DFE in time domain and operates in measurement up to 86 GHz while consuming power as low as 96.25 mW per latch. A half rate parallel look-ahead architecture is used for the implementation of the DFE.
Keywords :
S-parameters; comparators (circuits); decision feedback equalisers; flip-flops; frequency dividers; integrated circuit design; mixed analogue-digital integrated circuits; optical communication; time-domain analysis; D flip-flops; bandwidth 70.5 GHz; bipolar technology; bit rate 100 Gbit/s; broadband front-end; decision feedback equalizer; differential voltage gain; frequency 110 GHz; frequency 86 GHz; mixed-signal techniques; optical communication; parallel look-ahead architecture; performance evaluation; power 96.25 mW; single ended S-parameter measurements; size 0.13 mum; static frequency divider; time domain; very high speed broadband latched comparators; Bandwidth; Decision feedback equalizers; Flip-flops; Frequency conversion; Gain measurement; Germanium silicon alloys; Optical fiber communication; Scattering parameters; Silicon germanium; Voltage; CD; DFE; ECL; ISI; PMD; SiGe;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422959
