Simulation and characterization of a high temperature SIMOX-operational amplifier

For conventional junction isolated silicon integrated circuits, leakage currents increase with temperature. These currents across reverse bias junctions can easily modify circuit performance and even cause latch up. SOI (Silicon On Isolator) devices greatly minimize such leakage currents. Realizing high temperature linear circuits the SIMOX (Separation by IMplantation of OXygen) technology is used, because this technology can produce fully depleted thin-film MOSFETs with high electrical performance. In this paper a simple SIMOX-model, which is verificated in dependence on temperature and back-gate potential is presented. By the help of this model linear circuits (i.e.: operational amplifiers (OPA), voltage references, etc.) are developed, which can be operated up to 300°C. Furthermore, first long-term examinations are accomplished to predict the reliability of SIMOX-MOSFETs at high temperatures