Title :
Revisiting the impact on sub-threshold regions in uniaxially-strained FETs
Author :
Na, M. H. ; McStay, K. ; Nowak, E. J.
Author_Institution :
IBM Semiconductor Research and Development Center, Hopewell Junction, New York, USA
Abstract :
Abstract withdrawn
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551912
