Millimeter wave MOSFET amplitude detector

Author

Rami, Said ; Tuni, Wako ; Eisenstadt, William R.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

fYear

2010

Firstpage

84

Lastpage

87

Abstract

A comprehensive analysis of a wideband MOSFET amplitude detector for built-in-self-test is presented under multiple operating conditions. A simplified RF-to-DC conversion equation for detection in the saturation region is derived. Two conversion modes are uncovered in the subthreshold operation region. The first mode, which applies to relatively large input signal levels, has linear RF-to-DC proportionality. The second subthreshold mode, for small signal levels, has square-law proportionality. The body effect was investigated in the saturation region and subthreshold´s two modes. Detection in the triode is also discussed. A bandwidth equation accounting for the detector´s loading effects on the circuit-under-test is introduced.

Keywords

MOSFET; built-in self test; circuit testing; millimetre wave detectors; peak detectors; RF-to-DC conversion equation; bandwidth equation; body effect; built-in-self-test; circuit-under-test; conversion mode; linear RF-to-DC proportionality; millimeter wave MOSFET amplitude detector; peak detector; saturation region; signal level; square-law proportionality; subthreshold operation region; wideband MOSFET amplitude detector; Bandwidth; Built-in self-test; Cables; Circuit testing; Detectors; Equations; MOSFET circuits; Millimeter wave technology; Radio frequency; Voltage; Design for testability; peak detectors; self-testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Conference_Location

New Orleans, LA

Print_ISBN

978-1-4244-5456-3

Type

conf

DOI

10.1109/SMIC.2010.5422961

Filename

5422961