Device models in FDTD analysis of microwave circuits

Author

Kuo, Chien-Nan ; Houshmand, Bijarz ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1995

Firstpage

467

Lastpage

470

Abstract

This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation

Keywords

III-V semiconductors; MESFET circuits; active networks; circuit analysis computing; electromagnetic fields; finite difference time-domain analysis; gallium arsenide; microwave amplifiers; microwave circuits; multiport networks; FDTD analysis; GaAs; Norton-equivalent approach; Thevenin-equivalent approach; electromagnetic field; equivalent sources; finite-difference time-domain; microwave active devices; microwave amplifier; microwave circuits; three-terminal active device; Analytical models; Circuit analysis; Circuit simulation; Equivalent circuits; Finite difference methods; Microwave circuits; Microwave devices; Microwave theory and techniques; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Conference_Location

San Francisco

Print_ISBN

0-7803-2516-8

Type

conf

DOI

10.1109/ISSSE.1995.498033

Filename

498033