DocumentCode
1628123
Title
Silicon integrated defected ground structures
Author
Schlieter, Daniel B. ; Henderson, Rashaunda M.
Author_Institution
Erik Jonsson Sch. of Eng. & Comput. Sci., Univ. of Texas at Dallas, Richardson, TX, USA
fYear
2010
Firstpage
92
Lastpage
95
Abstract
In this paper we study the impact of two common defected ground structures fabricated in finite ground coplanar waveguide on silicon and alumina substrates useful for monolithic and hybrid designs. The single defects resonate at 30GHz and have bandwidth differences due to the nature and size of the defect. On-wafer measurements up to 40GHz are included for the silicon designs and show good agreement with simulation.
Keywords
alumina; coplanar waveguides; elemental semiconductors; silicon; alumina substrates; finite ground coplanar waveguide; frequency 30 GHz; frequency 40 GHz; hybrid designs; integrated defected ground structures; monolithic designs; Bandwidth; Coplanar waveguides; Filters; Frequency response; Gold; Metallization; Q factor; Shape; Silicon; Spirals; CPW; DGS; dumbbell; silicon integration; spiral;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location
New Orleans, LA
Print_ISBN
978-1-4244-5456-3
Type
conf
DOI
10.1109/SMIC.2010.5422964
Filename
5422964
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