Title :
Accurate small-signal model and its parameter extraction in RF silicon MOSFETs
Author :
Jaejune Jang ; Zhiping Yu ; Dutton, R.W.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Abstract :
An accurate method to extract a small signal equivalent circuit model of RF silicon MOSFETs is presented. Analytical calculations are used for each intrinsic parameter and accuracy is within 1% for the entire operational region. 2D physical device simulation is used to analyze this methodology. A simple non-quasi static (NQS) model is reported, which offers good accuracy needed for circuit simulation, including a simple network representing the coupling between source and drain. Accurate extraction methods for extrinsic parameters have been also developed. The compact model and its parameter extraction are verified on Si-MOSFETs through S-parameter measurements.
Keywords :
MOSFET; S-parameters; elemental semiconductors; equivalent circuits; semiconductor device measurement; semiconductor device models; silicon; 2D physical device simulation; MOSFET parameter extraction; NQS model accuracy; S-parameters; Si; compact RF silicon MOSFET small-signal models; equivalent circuits; extrinsic parameters; intrinsic parameters; nonquasi-static modeling; source drain coupling network representation; Analytical models; Circuit simulation; Coupling circuits; Equivalent circuits; MOSFETs; Parameter extraction; RF signals; Radio frequency; Scattering parameters; Silicon;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210578
