Title :
A deep silicon via (DSV) ground for sige power amplifiers
Author :
Blaschke, V. ; Thibeault, T. ; Lanzerotti, L. ; Cureton, C. ; Zwingman, R. ; KarRoy, A. ; Preisler, E. ; Howard, D. ; Racanelli, M.
Author_Institution :
Jazz Semicond., Newport Beach, CA, USA
Abstract :
A low parasitic inductance ground for SiGe power amplifiers has been implemented using a deep silicon via (DSV). The advantages and opportunities that this approach opens for the power amplifier (PA) design process are demonstrated. DSV resistance, inductance, and data from IV sweep, RF characterization and load pull measurements are analyzed.
Keywords :
Ge-Si alloys; power amplifiers; radiofrequency amplifiers; semiconductor materials; RF characterization; SiGe; deep silicon via ground; load pull measurements; low parasitic inductance ground; power amplifiers; Electrical resistance measurement; Germanium silicon alloys; Inductance; Inductors; Plugs; Power amplifiers; Radiofrequency amplifiers; Shunt (electrical); Silicon germanium; Tungsten; SiGe power amplifiers; common emitter configuration; deep silicon via; emitter ballasting; low parasitic inductance ground; thermal stability;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422966
