DocumentCode :
1628161
Title :
Tri-band SAW-less high linearity low noise CDMA receiver in 65nm CMOS
Author :
Liu, Li ; Gudem, Prasad ; Chang, Tony ; Cabanillas, Jose ; Panikkath, Vinod ; Yan, Hongyan ; Woolfrey, John ; Sahota, Kamal
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
fYear :
2010
Firstpage :
631
Lastpage :
634
Abstract :
In this paper, the recent advances of CDMA receiver IC design are reviewed. Architecture choices for high linearity low noise CDMA receiver are compared in terms of cost, performance and complexity. The design of tri-band (450M/CELL/PCS) SAW-less CDMA receiver in 65nm CMOS is then described. Measured receiver noise figure is less than 3 dB, X-MOD IIP3 is better than 18 dBm for 450M/CELL band, and 8 dBm for PCS band, and IIP2 is better than 60 dBm for all the three bands.
Keywords :
CMOS integrated circuits; code division multiple access; radio receivers; CDMA receiver IC design; CMOS; receiver noise figure; size 65 nm; triband SAW-less high linearity low noise CDMA receiver; CMOS integrated circuits; Computer architecture; Microprocessors; Mixers; Multiaccess communication; Noise; Receivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667302
Filename :
5667302
Link To Document :
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