DocumentCode :
1628240
Title :
Wireless inter-chip interconnects using IR-UWB-CMOS
Author :
Kikkawa, Takamaro
Author_Institution :
Res. Inst. for Nanodevice & Bio Syst., Hiroshima Univ., Higashi-Hiroshima, Japan
fYear :
2010
Firstpage :
623
Lastpage :
626
Abstract :
Wireless inter-chip interconnects using impulse-radio based ultra-wideband (IR-UWB) CMOS transmitter and receiver were developed for future 3D integration. Silicon integrated antennas were fabricated on a Si substrate by use of conventional back-end metallization processes. Characteristics of on-chip antennas were investigated in terms of device and material parameters. A single-chip IR-UWB CMOS receiver with an on-chip antenna was also investigated for verifying synchronization and data recovery as well as bit error rates for inter-chip wireless interconnects. The receiver could recover 200 Mbps data from the Gaussian monocycle pulse signal, which was transmitted from an on-chip antenna of the other chip at a distance of 0.5 mm. Bit error rate of 6.89 × 10-9 for the distance of 9 cm was obtained in spurious environment.
Keywords :
CMOS integrated circuits; Gaussian processes; antennas; error statistics; metallisation; radio receivers; radio transmitters; ultra wideband communication; 3D integration; Gaussian monocycle pulse signal; IR-UWB CMOS receiver; back-end metallization processes; bit error rates; distance 0.5 mm; distance 9 cm; impulse radio; on-chip antennas; silicon integrated antennas; ultrawideband CMOS transmitter; wireless inter-chip interconnects; Bit error rate; Receiving antennas; Silicon; Substrates; Transmitting antennas;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667305
Filename :
5667305
Link To Document :
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