Title :
Experimental demonstration of non-majority, nanomagnet logic gates
Author :
Varga, E. ; Siddiq, M. ; Niemier, M.T. ; Alam, Mohammad Tawhidul ; Bernstein, G.H. ; Porod, W. ; Hu, X.S. ; Orlov, A.
Author_Institution :
Dept. of Elec. Eng., U. of Notre Dame, Notre Dame, IN, USA
Abstract :
Lithographically defined magnets can process and move information in a cellular, locally interconnected architecture. Wires, majority gates, and inversion have all been demonstrated at room temperature, and it is estimated that if 1010 magnets switch 108 times/s, the magnets themselves would dissipate only about 0.1 W of power. Local clock fields required for switching, as well as I/O, can be realized with CMOS circuitry. Energy differences between magnetization states can be large, and an external stimulus is required for logic reevaluation. It is depicted that a line of magnets that are initially in a logically correct state. A magnetic field (clock) modulates a device´s energy barrier by biasing a device along its hard axis against a preferred shape anisotropy. As the field is removed, magnets relax into a state in accordance with a new input. Copper wires clad with ferromagnetic material on the sides and bottom can provide a magnetic field for on-chip, local control of Nanomagnet Logic (NML) circuits. Devices have been switched experimentally with this setup.
Keywords :
ferromagnetic materials; lithography; logic gates; nanomagnetics; CMOS circuitry; clock; copper wires; ferromagnetic material; interconnected architecture; lithography; magnetic field; magnetization states; nonmajority nanomagnet logic gates; Logic gates;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551918