• DocumentCode
    1628275
  • Title

    Design of Ku-band SIR interdigital bandpass filter using silicon-based micromachining technology

  • Author

    Hsieh, Sheng-Chi ; Chang, Chia-Chan ; Chen, Yi-Ming ; Lin, Chun-Chi ; Chang, Sheng-Fuh

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chung Cheng Univ., Chiayi, Taiwan
  • fYear
    2010
  • Firstpage
    104
  • Lastpage
    107
  • Abstract
    This paper presents design, fabrication, and measurement of a Ku-band micromachined bandpass filter. The fourth-order interdigital filtered based on step-impedance resonators (SIRs) is fabricated and self-packaged by three high-resistivity(> 10K¿cm) silicon wafers to achieve compactness and low loss. The proposed circuit is designed to produce a passband of 21% centered at 14.2 GHz. Experimental results exhibit that the insertion loss is 2.3 dB and the return loss is better than 20 dB within passband. The fabrication technology can be applied for other micromachined devices.
  • Keywords
    band-pass filters; elemental semiconductors; micromachining; microwave filters; resonator filters; silicon; Ku-band SIR interdigital bandpass filter; Ku-band micromachined bandpass filter; Si; fourth-order interdigital filter; frequency 14.2 GHz; high-resistivity silicon wafers; insertion loss; loss 2.3 dB; return loss; silicon-based micromachining technology; step-impedance resonators; Band pass filters; Circuits; Fabrication; Impedance; Micromachining; Microwave filters; Passband; Resonance; Resonator filters; Silicon; Interdigital filter; Micromachined; Step-impedance resonator (SIR); bandpass filter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422969
  • Filename
    5422969