DocumentCode
1628275
Title
Design of Ku-band SIR interdigital bandpass filter using silicon-based micromachining technology
Author
Hsieh, Sheng-Chi ; Chang, Chia-Chan ; Chen, Yi-Ming ; Lin, Chun-Chi ; Chang, Sheng-Fuh
Author_Institution
Dept. of Electr. Eng., Nat. Chung Cheng Univ., Chiayi, Taiwan
fYear
2010
Firstpage
104
Lastpage
107
Abstract
This paper presents design, fabrication, and measurement of a Ku-band micromachined bandpass filter. The fourth-order interdigital filtered based on step-impedance resonators (SIRs) is fabricated and self-packaged by three high-resistivity(> 10K¿cm) silicon wafers to achieve compactness and low loss. The proposed circuit is designed to produce a passband of 21% centered at 14.2 GHz. Experimental results exhibit that the insertion loss is 2.3 dB and the return loss is better than 20 dB within passband. The fabrication technology can be applied for other micromachined devices.
Keywords
band-pass filters; elemental semiconductors; micromachining; microwave filters; resonator filters; silicon; Ku-band SIR interdigital bandpass filter; Ku-band micromachined bandpass filter; Si; fourth-order interdigital filter; frequency 14.2 GHz; high-resistivity silicon wafers; insertion loss; loss 2.3 dB; return loss; silicon-based micromachining technology; step-impedance resonators; Band pass filters; Circuits; Fabrication; Impedance; Micromachining; Microwave filters; Passband; Resonance; Resonator filters; Silicon; Interdigital filter; Micromachined; Step-impedance resonator (SIR); bandpass filter;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location
New Orleans, LA
Print_ISBN
978-1-4244-5456-3
Type
conf
DOI
10.1109/SMIC.2010.5422969
Filename
5422969
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