Title :
Effects of edge chemistry doping on graphene nanoribbon mobility
Author :
Ouyang, Y. ; Sanvito, S. ; Guo, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
We have presented a simulation study of the edge-doping-limited mobility. The edge chemistry of different dopant species is captured by calibrating TB Hamiltonian to the ab-initio simulations. Due to the nature of quasi-1D channel, electronic transport can be significantly degraded by edge chemistry doping especially at a small channel width. A Careful control of doping process (e.g. doping density less than 5% or a complete edge doping that substitutes all edge C atoms or H atoms) is important to reduce the adverse effects on mobility.
Keywords :
graphene; nanotechnology; semiconductor doping; TB Hamiltonian; edge chemistry doping; edge-doping-limited mobility; electronic transport; graphene nanoribbon mobility; quasi-1D channel; Charge carrier density; Charge carrier processes; Chemistry; Doping; Nitrogen; Photonic band gap; Semiconductor process modeling;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551920