Title :
MuGFETs for microwave and millimeter wave applications
Author :
Tinoco, J.C. ; Raskin, J. -P ; Cerdeira, A. ; Estrada, M.
Author_Institution :
Dept. de Ing. en Telecomun., F-I UNAM, Mexico City, Mexico
Abstract :
In the last years the MOS transistor technology has reach very high cut-off frequencies (near to 500 GHz), thanks to the continuous reduction of the channel length, but the short-channel-effects (SCE) strongly affects the MOSFET behavior below 60 nm. For such technology nodes the Multiple-Gate transistor (MuGFET) appears as a promising alternative to continue with the International Technology Roadmap of Semicoductors (ITRS) projections. In this paper, limitations and possible improvements of MuGFETs are presented.
Keywords :
MOSFET; microwave transistors; millimetre wave transistors; MOS transistor technology; MuGFET; channel length; multiple-gate transistor; short channel effects; Capacitance; Cutoff frequency; FinFETs; Limiting; Logic gates; MOSFET circuits; Transconductance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667308
