Title :
Structure and doping effects in carbon heterojunction FETs towards barrier-free inter-band tunneling
Author :
Yoon, Youngki ; Salahuddin, Sayeef
Author_Institution :
Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
We have shown that it may be possible to use a CNT-GNR heterostructure to obtain a novel transistor action such that (i) at low voltage the device acts like a tunneling transistor, reducing the voltage requirement below the classical limit and (ii) at high voltages the tunnel barrier is effectively diminished, thus allowing a large drive current. Therefore, such a heterostructure may combine the best practices of both a tunneling FET and a conventional MOSFET in the same device structure and thus guide a way in designing ultra low-power carbon-based electronics.
Keywords :
MOSFET; carbon nanotubes; field effect transistors; low-power electronics; semiconductor doping; tunnel transistors; CNT-GNR heterostructure; MOSFET; barrier-free inter-band tunneling; carbon heterojunction FET; doping effects; low-power carbon-based electronics; tunneling FET; Doping; Heterojunctions; Logic gates; Mathematical model; Transistors; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551923
