Title :
Full area emitter SiGe phototransistor for opto-microwave circuit applications
Author :
Rosales, Marc D. ; Schiellein, Julien ; Viana, Carlos ; Polleux, Jean-Luc ; Algani, Catherine
Author_Institution :
Univ. Paris-Est -ESYCOM-ESIEE, Marne la Vallee, France
Abstract :
We present a study of full area emitter phototransistors with different optical window sizes implemented in a SiGe Bipolar technology. Extracted responsivity of 3.5 A/W and an opto-microwave cut-off frequency of 739 MHz were observed.
Keywords :
Ge-Si alloys; bipolar transistors; elemental semiconductors; microwave circuits; phototransistors; bipolar technology; full area emitter phototransistors; optical window sizes; opto-microwave circuit applications; opto-microwave cut-off frequency; Gain; Integrated optics; Optical device fabrication; Optical receivers; Phototransistors; Silicon germanium; Stimulated emission;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324164
