• DocumentCode
    1628370
  • Title

    Full area emitter SiGe phototransistor for opto-microwave circuit applications

  • Author

    Rosales, Marc D. ; Schiellein, Julien ; Viana, Carlos ; Polleux, Jean-Luc ; Algani, Catherine

  • Author_Institution
    Univ. Paris-Est -ESYCOM-ESIEE, Marne la Vallee, France
  • fYear
    2012
  • Firstpage
    294
  • Lastpage
    296
  • Abstract
    We present a study of full area emitter phototransistors with different optical window sizes implemented in a SiGe Bipolar technology. Extracted responsivity of 3.5 A/W and an opto-microwave cut-off frequency of 739 MHz were observed.
  • Keywords
    Ge-Si alloys; bipolar transistors; elemental semiconductors; microwave circuits; phototransistors; bipolar technology; full area emitter phototransistors; optical window sizes; opto-microwave circuit applications; opto-microwave cut-off frequency; Gain; Integrated optics; Optical device fabrication; Optical receivers; Phototransistors; Silicon germanium; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324164
  • Filename
    6324164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628370