Title :
22 nm node Si SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistor and its SOC with channel length less than 10nm for communication applications
Author :
Zhao, Y.F. ; Xu, Y.Z. ; Bai, D. ; Yang, Y.H. ; Xu, C.H. ; Shen, S.K. ; Mon, B. ; Fan, H. ; Xu, P. ; Xu, J. ; Yang, R. ; Li, G.H. ; Huang, D.H. ; Huang, C.
Author_Institution :
Beijing Microelectron. Inst., Beijing, China
Abstract :
22nm node Si SOI Coplanar “N Channel Vertical Dual Carrier Field Effect Transistors” (VDCFET) and its SOC with effective channel length less than 10nm for communication applications are presented.
Keywords :
field effect transistors; silicon-on-insulator; system-on-chip; SOC; SOI; VDCFET; coplanar N channel vertical dual carrier field effect transistor; CMOS integrated circuits; FETs; Fabrication; Junctions; Silicon; Silicon on insulator technology; System-on-a-chip;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667311
