A plastic packaged Ku-band LNB with very high susceptibility to supply PLL in 0.18um CMOS

Author

Miyashita, Kiyoshi

Author_Institution

Design & Dev. Center, Asahi-Kasei Microdevices Corp., Atsugi, Japan

fYear

2010

Firstpage

188

Lastpage

191

Abstract

This paper presents a Ku-band low-noise block that includes very high susceptibility to power supply PLL in a 0.18 um CMOS technology. The front-end down-converts the input signal from the Ku-band (10.5~13 GHz) to the IF (~2.3 GHz). The fully integrated LNB is dedicated to both satellite receivers and microwave link products. The VCO that includes full differential varactor shows a very low supply sensitivity (Kpss = -0.18[%/V]) that can eliminates on chip voltage regulator. The LNB performances include 28.2 dB gain, -20.5 dBm IIP3, 3.4 dB NF, and -107 dBc/Hz phase noise at 1 MHz offset. The front-end consumes 364 mW from a 1.8V supply. The core size is about 0.95Ã—2.3 [mm²].

Keywords

CMOS integrated circuits; field effect MMIC; phase locked loops; power supply circuits; CMOS; Ku-band low-noise block; VCO; full differential varactor; gain 28.2 dB; microwave link products; plastic packaged Ku-band LNB; power 364 mW; satellite receivers; size 0.18 mum; supply PLL; very high susceptibility; voltage 1.8 V; CMOS technology; Gain; Phase locked loops; Plastic packaging; Power supplies; Regulators; Satellites; Varactors; Voltage; Voltage-controlled oscillators; CMOS; Ku-band; low noise block; microwave link; phase locked loop; satellite;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on

Conference_Location

New Orleans, LA

Print_ISBN

978-1-4244-5456-3

Type

conf

DOI

10.1109/SMIC.2010.5422974

Filename

5422974