PM and AM noise of common collector and Darlington amplifiers

Author

Kuleshov, V.N. ; Boldyreva, T.I. ; Krylov, A.A.

Author_Institution

Moscow Power Eng. Inst., Russia

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

192

Lastpage

199

Abstract

An approach to calculation of wideband and 1/f PM and AM noise of common collector (CC) and Darlington amplifiers is developed. An influence of signal frequency and signal source impedance on power spectral densities of PM and AM noise of particular examples of CC and Darlington amplifiers is investigated. A comparison of PM and AM noise of these types of amplifiers is fulfilled. The comparison is made supposing that load resistances and signal source resistances of the amplifiers are the same. It was assumed also that the output transistor of Darlington amplifier has the same parameters and operating point as a transistor of CC amplifier, and a structure of this transistor can be obtained by parallel connection of the Darlington amplifier input transistor structures

Keywords

1/f noise; amplifiers; bipolar transistor circuits; circuit noise; compensation; equivalent circuits; phase noise; 1/f noise; AM noise; Darlington amplifiers; PM noise; bipolar junction transistor amplifiers; circuit model; common collector amplifiers; equivalent circuit; parallel connection; power spectral densities; recombination rate fluctuations; signal frequency; signal source impedance; two-transistor circuit configurations; wideband noise; Broadband amplifiers; Circuit noise; Fluctuations; Frequency; Impedance; Low-noise amplifiers; Noise level; Phase noise; Power amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International

Conference_Location

Seattle, WA

ISSN

1075-6787

Print_ISBN

0-7803-7028-7

Type

conf

DOI

10.1109/FREQ.2001.956185

Filename

956185