DocumentCode :
1628455
Title :
Vertertical integration of silicon nitride on siliconon-insulator platform
Author :
Li, Qing ; Eftekhar, Ali A. ; Sodagar, Majid ; Atabaki, Amir H. ; Adibi, Ali
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2012
Firstpage :
303
Lastpage :
304
Abstract :
We propose to integrate silicon nitride on silicon-on-insulator platform for devices which require low insertion loss and high power handling capability. Preliminary results including silicon nitride growth, high-Q resonator fabrication, and vertical integration are presented.
Keywords :
integrated optics; optical losses; silicon compounds; silicon-on-insulator; wide band gap semiconductors; SiN; Absorption; Annealing; Microcavities; Optical waveguides; Silicon; Silicon compounds; silicon nitride; silicon-on-insulator; vertical;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4577-0826-8
Type :
conf
DOI :
10.1109/GROUP4.2012.6324167
Filename :
6324167
Link To Document :
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