Title :
A V-band 90-nm CMOS low-noise amplifier with modified CPW transmission lines for UWB systems
Author :
Haroun, Ibrahim ; Wight, Jim ; Plett, Calvin ; Fathy, Aly ; Hsu, Yaun-Chai
Author_Institution :
Carleton Univ., Ottawa, ON, Canada
Abstract :
A V-band low-noise, high gain, high linearity single-stage amplifier has been developed in a 90-nm CMOS technology. The design utilized modified co-planar waveguide transmission lines for the input/output matching networks, to avoid lines´ width and spacing constraints and to sustain small chip area and low cost fabrication. The developed amplifier exhibited a low noise figure of 4.1 dB, and a gain higher than 10 dB in the frequency range of 57-58 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than 3 dBm. The proposed design is well suited for millimeter-wave (mmW) front-ends in ultra-wideband (UWB) radio-over-fiber (RoF) systems for high data-rate communications.
Keywords :
CMOS analogue integrated circuits; coplanar transmission lines; coplanar waveguides; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; radio-over-fibre; ultra wideband communication; V-band CMOS low-noise amplifier; co-planar waveguide transmission lines; data-rate communication; frequency 57 GHz to 58 GHz; input-output matching network; millimeter-wave front-ends; noise figure 4.1 dB; radio-over-fiber systems; single-stage amplifier; size 90 nm; third-order intercept point; ultra-wideband systems; CMOS technology; Coplanar transmission lines; Coplanar waveguides; Costs; Impedance matching; Linearity; Low-noise amplifiers; Noise figure; Optical device fabrication; Transmission lines; 60 GHz CMOS; EC-CPW; LNA; RoF; V-band components;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422983
