• DocumentCode
    1628554
  • Title

    A V-band 90-nm CMOS low-noise amplifier with modified CPW transmission lines for UWB systems

  • Author

    Haroun, Ibrahim ; Wight, Jim ; Plett, Calvin ; Fathy, Aly ; Hsu, Yaun-Chai

  • Author_Institution
    Carleton Univ., Ottawa, ON, Canada
  • fYear
    2010
  • Firstpage
    160
  • Lastpage
    163
  • Abstract
    A V-band low-noise, high gain, high linearity single-stage amplifier has been developed in a 90-nm CMOS technology. The design utilized modified co-planar waveguide transmission lines for the input/output matching networks, to avoid lines´ width and spacing constraints and to sustain small chip area and low cost fabrication. The developed amplifier exhibited a low noise figure of 4.1 dB, and a gain higher than 10 dB in the frequency range of 57-58 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than 3 dBm. The proposed design is well suited for millimeter-wave (mmW) front-ends in ultra-wideband (UWB) radio-over-fiber (RoF) systems for high data-rate communications.
  • Keywords
    CMOS analogue integrated circuits; coplanar transmission lines; coplanar waveguides; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; radio-over-fibre; ultra wideband communication; V-band CMOS low-noise amplifier; co-planar waveguide transmission lines; data-rate communication; frequency 57 GHz to 58 GHz; input-output matching network; millimeter-wave front-ends; noise figure 4.1 dB; radio-over-fiber systems; single-stage amplifier; size 90 nm; third-order intercept point; ultra-wideband systems; CMOS technology; Coplanar transmission lines; Coplanar waveguides; Costs; Impedance matching; Linearity; Low-noise amplifiers; Noise figure; Optical device fabrication; Transmission lines; 60 GHz CMOS; EC-CPW; LNA; RoF; V-band components;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422983
  • Filename
    5422983