Title :
A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering
Author :
Lam, Kai-Tak ; Da, Haixia ; Chin, Sai-Kong ; Samudra, G. ; Yeo, Yee-Chia ; Liang, Gengchiau
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enhancement of ION/IOFF through fine-tuning of the HJ region.
Keywords :
energy gap; field effect transistors; graphene; C; GNRHJ TFET; bandgap engineering; graphene nanoribbon heterojunction tunneling field-effect transistors; Doping; Materials; Nanoscale devices; Optical wavelength conversion; Performance evaluation; Photonic band gap; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551931
