Title :
GeSn light-emitting pin diodes on Si
Author_Institution :
University of Stuttgart, Institute of Semiconductor Engineering, Germany
Abstract :
GeSn LED´s exhibit light emission from the direct band transition. The emission wavelength is red shifted compared to Ge. The redshift of the direct band transition is confirmed by different optical characterization techniques.
Keywords :
elemental semiconductors; germanium compounds; light emitting diodes; p-i-n diodes; silicon; GeSn; Si; direct band transition; emission wavelength; light emission; light-emitting pin diodes; optical characterization techniques; red shifted; Absorption; Photonic band gap; Semiconductor lasers; Silicon; Tin;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324170
