Title :
Light emission from thulium silicates for optical amplifiers on silicon in extended optical communication bands
Author :
Omi, Hiroo ; Hagiwara, Atsushi ; Tawara, Takehiko
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
Tm2Si2O7 grown on silicon was characterized by synchrotron grazing incidence X-ray diffraction and micro photoluminescence/Raman spectroscopy. Tm2Si2O7 has luminescence at about 1620 nm, indicating its potential as a light amplifier in the L- and U-bands.
Keywords :
Raman spectra; X-ray diffraction; photoluminescence; thulium compounds; L-bands; Raman spectroscopy; Si; Tm2Si2O7; U-bands; extended optical communication bands; light amplifier; light emission; microphotoluminescence spectroscopy; optical amplifiers; synchrotron grazing incidence X-ray diffraction; wavelength 1620 nm; Annealing; Optical amplifiers; Optical fiber amplifiers; Optical fiber dispersion; Silicon; X-ray diffraction;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324171
