Title :
Nanowire-mask based fabrication of high mobility and low noise graphene nanoribbon short-channel field-effect transistors
Author :
Xu, G. ; Bai, J. ; Torres, C.M., Jr. ; Song, E.B. ; Tang, J. ; Zhou, Y. ; Duan, X. ; Zhang, Y. ; Huang, Y. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA
Abstract :
In this work, we present a GNR fabrication method based on a 9 nanowire-mask, where the edge roughness is determined by the surface roughness of the nanowire (<;1nm)2 . With four-terminal measurement setup, single layer nanoribbon (SLR) devices show μhole~1180cm2/(Vs), Ion/Iοff >7 and low frequency noise figure A~10-6 at 300K. Moreover, short-channel SLR (~250nm) shows conductance quantization at 77K , and confirms that the quasi-ballistic transport properties can be achieved through this method.
Keywords :
electric admittance; graphene; high electron mobility transistors; nanowires; surface roughness; edge roughness; high mobility; low noise graphene nanoribbon short-channel field-effect transistors; nanowire-mask based fabrication; single layer nanoribbon devices; surface roughness; Fabrication; Logic gates; Low-frequency noise; Pollution measurement; Quantization; Silicon;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551935
