Title :
Compact modeling of collector base junction space charge region transit time effect on noise in SiGe HBTs
Author :
Xu, Ziyan ; Niu, Guofu ; Malladi, Ramana M.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
Abstract :
This paper investigates the impact of collector-base space charge region (CB SCR) transport on RF noise in bipolar transistor using compact modeling. A model applicable to any compact models is derived and implemented using Verilog-A. Comparison with noise measurement on a SiGe HBT technology shows that overall the noise modeling results are much improved. The imaginary part of optimum generator admittance is slightly worse than without this effect.
Keywords :
Ge-Si alloys; electric admittance; hardware description languages; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; HBT; RF noise; SiGe; Verilog-A; bipolar transistor; collector-base space charge region; compact modeling; noise measurement; noise modeling; transit time effect; Bipolar transistors; Germanium silicon alloys; Hardware design languages; Heterojunction bipolar transistors; Noise measurement; Radio frequency; Silicon germanium; Space charge; Space technology; Thyristors; Noise modeling; SCR; SiGe HBTs; Verilog-A; correlation;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422988
