Factors enhancing In0.7Ga0.3As MOSFETs and tunneling FETs device performance

Author

Zhao, Hang ; Goel, N. ; Huang, J. ; Chen, Y. ; Yum, J. ; Wang, Y. ; Zhou, F. ; Xue, F. ; Lee, J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA

fYear

2010

Firstpage

63

Lastpage

64

Abstract

We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5 × 10¹²/cm²) in In_0.7Ga_0.3As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (I_d) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-κ interface, and confining carriers in In_0.7Ga_0.3As channel using In_0.52Al_0.48As bottom-barrier, SS and mobility of MOSFETs were improved from 152 to 99 mV/dec and from ~2500 to ~5000 cm²/V-s, respectively. TFETs achieved small SS (96 mV/dec) and high I_d (55 μA/μm) due to low EOT and abrupt, vertical insitu grown III-V epitaxial junctions.

Keywords

III-V semiconductors; MOSFET; indium compounds; quantum well devices; tunnelling; III-V epitaxial junctions; In_0.52Al_0.48As; In_0.7Ga_0.3As; mobility improvement; quantum-well MOSFET; sub-threshold swing; tunneling FET; Aluminum oxide; Indium gallium arsenide; Indium phosphide; International Electron Devices Meeting; MOSFETs; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551938

Filename

5551938