DocumentCode
1628756
Title
MOSSIM: metal oxide semiconductor device simulation package
Author
Kumar, Umesh
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
fYear
1995
Firstpage
553
Lastpage
556
Abstract
This paper discusses about the MOS device simulator developed by us, which simulates the device characteristics up to submicron channel length. It includes long channel, short channel, subthreshold field dependent mobility and punch through models
Keywords
MIS devices; MOSFET; carrier mobility; digital simulation; semiconductor device models; software packages; MOS device simulator; MOSSIM; NMOS transistor; device characteristics; long channel; metal oxide semiconductor device simulation package; punch through models; short channel; submicron channel length; subthreshold field dependent mobility; Capacitance; Charge carrier processes; Circuit simulation; Conductors; Doping; Impurities; MOSFETs; Packaging; Subthreshold current; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on
Conference_Location
San Francisco
Print_ISBN
0-7803-2516-8
Type
conf
DOI
10.1109/ISSSE.1995.498054
Filename
498054
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