• DocumentCode
    1628789
  • Title

    Flatband voltage tuning and EOT reduction for SiO2/HfO2/TiN gate stacks via lanthanum oxide capping layers using two different lanthanum precursors

  • Author

    Chiang, C.K. ; Huang, H.Y. ; Wu, C.H. ; Lin, J.F. ; Liu, C.C. ; Yang, C.L. ; Wu, J.Y. ; Wang, S.J.

  • fYear
    2010
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    We have investigated the precursor effect of La2O3 cap layers on Vfb tuning and EOT reduction in SiO2/HfO2/TiN gate stacks. The Vfb tuning and EOT reduction correlate with the intermixing of La2O3 and HfO2 dielectrics which forms dipoles at the lower interface between HfO2 and SiO2 IL and the diffusion of La and Hf atoms to the SiO2 IL. The use of La(fAMD)3 precursor for the La2O3 cap layer deposition has been shown being much superior to La(thd)3 due to lower ALD process temperature and shorter O3 oxidant pulse duration.
  • Keywords
    IV-VI semiconductors; hydrogen compounds; lanthanum compounds; leakage currents; silicon compounds; titanium compounds; tunnelling; ALD process temperature; EOT reduction; HfO2; La(fAMD)3 precursor; La(thd)3 precursor; La2O3; SiO2; TiN; flatband voltage tuning; lanthanum oxide capping layers; lanthanum precursors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551940
  • Filename
    5551940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628789