Title :
Improvement of photoluminescence from Ge Layers with Si3N4/SiO2 Stressors
Author :
Oda, Katsuya ; Okumura, Tadashi ; Tani, Kazuki ; Saito, Shin-ichi ; Ido, Tatemi
Author_Institution :
Photonics Electron. Technol. Res. Assoc. (PETRA), Kokubunji, Japan
Abstract :
The photoluminescence from Ge stripes increased due to the large amount of tensile strain created by Si3N4/SiO2 stressors. The low temperature deposition of Si3N4 was also effective at improving the optical properties of the Ge layer.
Keywords :
chemical vapour deposition; elemental semiconductors; germanium; internal stresses; photoluminescence; semiconductor epitaxial layers; silicon compounds; Ge layers; Ge-Si3N4-SiO2; low temperature deposition; optical properties; photoluminescence; stressors; tensile strain; Diffraction; Lattices; Silicon; Substrates; Tensile strain; X-ray diffraction; X-ray scattering;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324178
