• DocumentCode
    1628826
  • Title

    Tuning the electroluminescence of n-Ge LEDs using process induced strain

  • Author

    Velha, Philippe ; Gallacher, Kevin ; Dumas, Derek ; Paul, Douglas J. ; Myronov, Maksym ; Leadley, David R.

  • Author_Institution
    Sch. of Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2012
  • Firstpage
    337
  • Lastpage
    339
  • Abstract
    LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelength. The direct bandgap electroluminescence emits up to ~ μW of power between 1.6 μm and ~1.8 μm, significantly larger than previous LEDs.
  • Keywords
    electroluminescence; elemental semiconductors; energy gap; germanium; light emitting diodes; optical tuning; Ge-Si; Ge-on-Si; LED; direct bandgap electroluminescence; emission wavelength; process induced strain; Current density; Energy measurement; Light emitting diodes; Optical wavelength conversion; Silicon; Strain; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4577-0826-8
  • Type

    conf

  • DOI
    10.1109/GROUP4.2012.6324179
  • Filename
    6324179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1628826