Title :
Effects of InP barrier layer thicknesses and different ALD oxides on device performance of In0.7Ga0.3As MOSFETs
Author :
Zhao, Han ; Kong, Ning ; Chen, Yen-Ting ; Wang, Yanzhen ; Xue, Fei ; Zhou, Fei ; Banerjee, Sanjay K. ; Lee, Jack C.
Author_Institution :
Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In this paper, InP barrier was used instead of InAlAs barrier due to its better interface quality with gate oxides. The effects of different InP barrier thicknesses on device performance were investigated. We have also deposited different ALD gate oxides (single Al2O3, HfO2 and Al2O3/HfO2 bilayer) and studied the influence of various oxides on oxide/barrier interface and device characteristics.
Keywords :
III-V semiconductors; MOSFET; indium compounds; ALD oxides; In0.7Ga0.3As; InP; MOSFET; barrier layer thicknesses; Aluminum oxide; Indium compounds; Indium phosphide; International Electron Devices Meeting; Logic gates; MOSFETs; Performance evaluation;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551942
