Title :
Uncooled high-efficiency lasers
Author_Institution :
Hewlett Packard, Ipswich, UK
Abstract :
In summary, we observed that the number of quantum wells and the suitable choice of the active structure enable high-efficiency uncooled InGaAsP-InP quantum well lasers to be produced without facet coatings for low-cost 1300-nm coaxial products
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1300 nm; InGaAsP-InP; active structure; high-efficiency uncooled InGaAsP-InP quantum well lasers; low-cost 1300-nm coaxial products; quantum well number; uncooled high-efficiency lasers; Distortion measurement; Fiber lasers; Indium phosphide; Intermodulation distortion; Laser noise; Optical distortion; Optical materials; Temperature dependence; Temperature distribution; Threshold current;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719936
