DocumentCode
1628927
Title
Power-on surge current minimization in an SOI-SRAM-Based FPGA
Author
Wu, Lihua ; Chen, Stanley L. ; Han, Xiaowei ; Zhao, Yan ; Liu, Zhongli ; Li, Yan
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear
2010
Firstpage
566
Lastpage
568
Abstract
A large and sudden current called surge current is always induced due to the momentary supply current through a low resistance path to ground when filed programmable gate array (FPGA) power on. This surge current will request the power supply of FPGA to source more current to meet this instantaneous demand or complicate the power management system of FPGA in order to succeed in powering up FPGA. Therefore, we describe and analyze the power-on surge current of FPGA in detail in this paper. According to the cause of power-on surge current, we modify the power-on sequence of FPGA, propose a novel SRAM cell embedded in the FPGA and add power routing pool to the FPGA, which have been implemented in an SRAM-Based FPGA, fabricated with a 0.5μm SOI CMOS process. The experimental results of full chip power-on indicate that the power-on surge current of FPGA has been significantly reduced compared with Xilinx Spartan and Spartan II family devices.
Keywords
CMOS integrated circuits; SRAM chips; field programmable gate arrays; silicon-on-insulator; SOI CMOS process; SOI-SRAM-based FPGA; momentary supply current; power management system; power routing pool; power-on surge current minimization; size 0.5 mum; Arrays; Field programmable gate arrays; Logic gates; Power supplies; Random access memory; Routing; Surges;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667332
Filename
5667332
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