Title :
Low temperature crystallization of highly textured GeSn thin films on SiO2 for 3D photonic integration
Author :
Li, Haofeng ; Salas, Alan ; Wang, Xiaoxin ; Liu, Jifeng
Author_Institution :
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
Abstract :
We report a highly (111)-textured Ge0.9Sn0.1 thin film fabricated on SiO2 at 464°C. Incorporating Sn into Ge significantly reduces the crystallization temperature and red-shifts the direct band gap to ~0.5 eV, approaching indirect-to-direct gap transition.
Keywords :
crystallisation; energy gap; germanium alloys; metallic thin films; red shift; surface texture; tin alloys; (111)-textured thin films; 3D photonic integration; GeSn; SiO2; indirect-to-direct gap transition; low temperature crystallization; red-shifts; temperature 464 degC; Annealing; CMOS integrated circuits; Crystallization; Photonics; Silicon; Tin; X-ray scattering;
Conference_Titel :
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0826-8
DOI :
10.1109/GROUP4.2012.6324182
