Power and linearity performance of a cascode InGaP/GaAs HBT distributed amplifier for instrument applications

Author

Boglione, L.

Volume

3

fYear

2003

Firstpage

2217

Abstract

This paper describes the performance of a cascode InGaP/GaAs HBT distributed amplifier for instrument applications. In particular, the linearity of the distributed amplifier is considered. The compression point, the second and third harmonics, and the third order intercept point have been measured over different bias conditions. At nominal bias, the amplifier delivers a P1dB of 20 dBm and a TOI of 30 dBm up to 20 GHz. This amplifier can achieve simultaneously some of the best results published in the literature.

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; distributed amplifiers; gallium arsenide; indium compounds; instrumentation amplifiers; integrated circuit design; linearisation techniques; 20 GHz; InGaP-GaAs; TOI; bias conditions; cascode InGaP/GaAs HBT distributed amplifier; compression point; instrument applications; linearity performance; power performance; second harmonics; small signal performance; third harmonics; third order intercept point; Bandwidth; Capacitors; Distributed amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Instruments; Linearity; Microwave technology; Power measurement; Power transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210605

Filename

1210605