Lattice defects properties of synthetic quartz crystals grown from various rotated Y-cut seed plates

Author

Kurashige, Masakazu ; Usami, Yoko ; Oba, Kenji ; Hattanda, Masahiro

Author_Institution

Kinseki Ltd., Tokyo, Japan

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

296

Lastpage

303

Abstract

Lattice defects in synthetic quartz crystals grown from various rotated Y-cut seed plates are studied. Dislocation density, OH^- concentration (alpha value), Al and Na concentrations, and other information are discussed in this paper. The states of these lattice defects included in each grown crystal are changed by their seed orientation

Keywords

X-ray topography; absorption coefficients; crystal growth from solution; dislocation density; dislocation nucleation; impurity distribution; piezoelectric materials; quartz; OH^- concentration; SAW wafer; SiO₂; X-ray topography; Z-bar crystals; absorption coefficients; alpha values; dislocation density; gamma ray darkening; impurity concentrations; large-scaled autoclaves; lattice defects; rotated Y-cut seed plates; seed orientation; synthetic quartz crystals; Artificial intelligence; Bars; Crystals; IEC standards; Industrial control; Lattices; Process control; Shape control; Surface acoustic waves; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International

Conference_Location

Seattle, WA

ISSN

1075-6787

Print_ISBN

0-7803-7028-7

Type

conf

DOI

10.1109/FREQ.2001.956206

Filename

956206