DocumentCode
1629028
Title
High-speed GeSi EA modulator at 1550 nm
Author
Feng, Dazeng ; Liao, Shirong ; Liang, Hong ; Fong, Joan ; Bijlani, Bhavin ; Shafiiha, Roshanak ; Luff, B. Jonathan ; Luo, Ying ; Cunningham, Jack ; Krishnamoorthy, Ashok V. ; Asghari, Mehdi
Author_Institution
Kotura Inc., Monterey Park, CA, USA
fYear
2012
Firstpage
355
Lastpage
357
Abstract
We demonstrate a high speed GeSi EA modulator with a broad operating wavelength range of over 30 nm near 1550 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias.
Keywords
Ge-Si alloys; electro-optical modulation; electroabsorption; integrated optics; semiconductor materials; GeSi; broad operating wavelength; frequency 40.7 GHz; high-speed GeSi EA modulator; reverse bias; voltage 2.8 V; wavelength 1550 nm; Bandwidth; Extinction ratio; Modulation; Optical waveguides; Photonics; Silicon; Voltage measurement; Electro-optical devices; Photonic integrated circuits; modulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2012 IEEE 9th International Conference on
Conference_Location
San Diego, CA
ISSN
1949-2081
Print_ISBN
978-1-4577-0826-8
Type
conf
DOI
10.1109/GROUP4.2012.6324185
Filename
6324185
Link To Document