• DocumentCode
    1629066
  • Title

    Enhanced spin injection into single layer graphene with atomically smooth MgO barrier

  • Author

    Han, Wei ; Pi, K. ; McCreary, K.M. ; Li, Yan ; Kawakami, R.K.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of California, Riverside, CA, USA
  • fYear
    2010
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    Atomically smooth MgO barrier on SLG and tunneling spin injection into SLG have been achieved. A large non-local MR of 130 Ω with a large spin injection efficiency of 31% is reported. These achievements are important advances for graphene spintronics.
  • Keywords
    graphene; magnesium compounds; magnetoelectronics; spin polarised transport; MgO; atomically smooth barrier; enhanced spin injection; graphene spintronics; single layer graphene; tunneling spin injection; Electrodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551950
  • Filename
    5551950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1629066