Numerical study on terahertz detection of MOS field-effect transistor

Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of MOSFETs as THz detectors, which may be helpful in the optimization of MOSFET in improving THZ detector performance.