Title :
Numerical study on terahertz detection of MOS field-effect transistor
Author :
He, Frank ; Yan, Zhifeng ; Zhu, Jingxuan ; Wu, Wen ; Liu, Zhiwei ; Wang, Wenping ; Ma, Yong ; Zhang, Dongwei ; Zhao, Wei ; Cao, Juncheng
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of MOSFETs as THz detectors, which may be helpful in the optimization of MOSFET in improving THZ detector performance.
Keywords :
MOSFET; terahertz wave detectors; MOS field effect transistor; MOSFET; heterodyne detection model; optical beating model; terahertz detection; Delay; Harmonic analysis; Logic gates; MOSFETs; Numerical models; Numerical simulation; Detection; Heterodyne; MOSFET; Numerical; Optical beating; Terahertz; electronic;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667339
