• DocumentCode
    1629090
  • Title

    Study of electromigration at interconnect vias

  • Author

    Wada, T. ; Matsuo, I. ; Umemoto, Takahiro

  • Author_Institution
    Matsushita Electron. Corp., Kyoto, Japan
  • fYear
    1990
  • Firstpage
    251
  • Lastpage
    256
  • Abstract
    Results of a study of electromigration at interconnect vias with respect to lifetime of the vias are presented. It is shown that the dependence of the lifetime of the vias on current and on temperature as well as the effect of copper doping is similar to that found in the aluminum stripe. The lifetime is nearly inversely proportional to the number of vias in a chain and the failure occurs in random vias. It is also found that lifetime is affected both by the number of vias and by the total metal length. The lifetime depends on the size of the vias
  • Keywords
    circuit reliability; electromigration; failure analysis; integrated circuit technology; metallisation; Al-Si; Cu doping; current; electromigration; failure; interconnect vias; temperature; via lifetime; Aluminum; Copper; Current density; Doping; Electric resistance; Electrical resistance measurement; Electromigration; Stress; Temperature dependence; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-87942-588-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.1990.161752
  • Filename
    161752