DocumentCode
1629090
Title
Study of electromigration at interconnect vias
Author
Wada, T. ; Matsuo, I. ; Umemoto, Takahiro
Author_Institution
Matsushita Electron. Corp., Kyoto, Japan
fYear
1990
Firstpage
251
Lastpage
256
Abstract
Results of a study of electromigration at interconnect vias with respect to lifetime of the vias are presented. It is shown that the dependence of the lifetime of the vias on current and on temperature as well as the effect of copper doping is similar to that found in the aluminum stripe. The lifetime is nearly inversely proportional to the number of vias in a chain and the failure occurs in random vias. It is also found that lifetime is affected both by the number of vias and by the total metal length. The lifetime depends on the size of the vias
Keywords
circuit reliability; electromigration; failure analysis; integrated circuit technology; metallisation; Al-Si; Cu doping; current; electromigration; failure; interconnect vias; temperature; via lifetime; Aluminum; Copper; Current density; Doping; Electric resistance; Electrical resistance measurement; Electromigration; Stress; Temperature dependence; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-87942-588-1
Type
conf
DOI
10.1109/ICMTS.1990.161752
Filename
161752
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