Switching probability in all-perpendicular spin valves

This paper discusses spin-transfer devices that have perpendicularly magnetized free and polarizing layers that offers the potential for reduced critical currents while still maintaining a high energy barrier U towards thermally induced magnetization reversal. A macrospin model predicts a zero-temperature switching current U for perpendicularly magnetized devices. For in-plane devices the current increasesby a term stemming from the free layer demagnetizing field caused by the free layer magnetization moving out of the plane during the switching process.